Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
نویسندگان
چکیده
منابع مشابه
Field emission from few-layer graphene nanosheets produced by liquid phase exfoliation of graphite.
Graphene nanosheets have been synthesized from commercial expandable graphite by heating in a microwave oven and dispersing in ethanol by ultrasonication. Scanning and transmission electron microscopy and electron energy-loss spectroscopy and atomic force microscope showed that the nanosheets were about 2 nm in thickness and 10 microm in diameter. The field emission of the graphene sheets has b...
متن کاملHigh-efficiency exfoliation of layered materials into 2D nanosheets in switchable CO2/Surfactant/H2O system
Layered materials present attractive and important properties due to their two-dimensional (2D) structure, allowing potential applications including electronics, optoelectronics, and catalysis. However, fully exploiting the outstanding properties will require a method for their efficient exfoliation. Here we present that a series of layered materials can be successfully exfoliated into single- ...
متن کاملExtremely Efficient Liquid Exfoliation and Dispersion of Layered Materials by Unusual Acoustic Cavitation
Layered materials must be exfoliated and dispersed in solvents for diverse applications. Usually, highly energetic probe sonication may be considered to be an unfavourable method for the less defective exfoliation and dispersion of layered materials. Here we show that judicious use of ultrasonic cavitation can produce exfoliated transition metal dichalcogenide nanosheets extraordinarily dispers...
متن کاملThe chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.
Ultrathin two-dimensional nanosheets of layered transition metal dichalcogenides (TMDs) are fundamentally and technologically intriguing. In contrast to the graphene sheet, they are chemically versatile. Mono- or few-layered TMDs - obtained either through exfoliation of bulk materials or bottom-up syntheses - are direct-gap semiconductors whose bandgap energy, as well as carrier type (n- or p-t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science
سال: 2011
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.1194975